PART |
Description |
Maker |
MX29F001TTC-90 MX29F001TTC-70 MX29F001TTC-12 MX29F |
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDIP32 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDSO32 x8 Flash EEPROM x8闪存EEPROM
|
Macronix International Co., Ltd.
|
E28F010-65 N28F010-65 F28F010-65 P28F010-65 E28F01 |
1024K (128K x 8) CMOS FLASH MEMORY 1024K (128K x 8) CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
|
Intel Corporation Intel, Corp. Intel Corp.
|
AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
|
W29EE012 W39L020P-70 W39L020P-70B W39L020P-90 W39L |
128K X 8 FLASH 5V PROM, 90 ns, PQCC32 128K X 8 FLASH 5V PROM, 90 ns, PDSO32 128K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 3.3V PROM, 90 ns, PDSO32
|
Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
|
CAT28F010NI-12T CAT28F010TI-90T CAT28F010TI-12T CA |
1 Megabit CMOS Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 Bulk Erase Flash Memory, 1Mb 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
|
http:// CATALYST[Catalyst Semiconductor] ON SEMICONDUCTOR
|
W49F201 W49F201S-45 W49F201S-45B W49F201S-55 W49F2 |
128K X 16 CMOS FLASH MEMORY
|
WINBOND[Winbond]
|
CAT28F010TRI-70T CAT28F010N-90T CAT28F010P-15 CAT2 |
128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32 1 Megabit CMOS Flash Memory(79.65 k) 1兆位的CMOS快闪记忆体(79.65十一 x8 Flash EEPROM x8闪存EEPROM
|
Ironwood Electronics NXP Semiconductors N.V. Microchip Technology, Inc. ON SEMICONDUCTOR
|
A28F010 |
1024K (128K x 8) CMOS FLASH MEMORY
|
INTEL[Intel Corporation]
|
MX28F1000P |
1M-BIT [128K x 8] CMOS FLASH MEMORY
|
List of Unclassifed Manufacturers
|
5962-9089903MTX 5962-9089903MUX 5962-9089903MXX 59 |
SOLID TANTALUM RoHS Compliant: Yes MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON 微电路,存储器,DIGITAA型,CMOS128K的8位闪存EEPROM存储器,单片 MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON 微电路,存储器,DIGITAA型,CMOS28K的8位闪存EEPROM存储器,单片
|
List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
|